High-temperature characteristics of Ag and Ni/diamond Schottky diodes

K. Ueda*, K. Kawamoto, T. Soumiya, H. Asano

*この研究の対応する著者

研究成果: Article査読

28 被引用数 (Scopus)

抄録

The high-temperature characteristics of diamond Schottky diodes fabricated using Ag or Ni on in-situ boron-doped diamond were examined. Up to 600 C, Ag Schottky diodes exhibited a high rectification ratio of the order of 10 4. Even at ∼ 750 C, their rectification ratio was about 10, indicating that diamond field effect transistors with Ag Schottky diodes can operate at this temperature. In contrast, Ni Schottky diodes did not show clear rectification above 600 C. An analysis of the I-V curves indicated that the Ag Schottky diodes have a higher rectification ratio than the Ni Schottky diodes at high temperatures due to their higher barrier heights (φB = ∼ 2.0 and ∼ 0.7 eV for Ag and Ni, respectively).

本文言語English
ページ(範囲)41-44
ページ数4
ジャーナルDiamond and Related Materials
38
DOI
出版ステータスPublished - 2013
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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