High-temperature characteristics of AlxGa1-xN-based vertical conducting diodes

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We investigated the high-temperature characteristics for Al xGa1-xN-based (x = 0-0.57) vertical conducting diodes. In the forward current-voltage (I-V) characteristics, the offset voltage decreases with temperature because of the reduction of the built-in potential due to the decrease in the bandgap energy with temperature. In spite of an increase in SiC substrate resistance with temperature because of a decrease in the electron mobility, the on-state resistance of the diode with Al0.22Ga 0.78N is as low as 1.45mΩcm2 even at 250°C because of the reduced resistance of the p-InGaN layer due to an increase in the hole concentration. In the reverse I-V characteristics, the breakdown voltage increases with increasing Al composition, x, of AlxGa1-xN layer because the higher the Al composition of the AlxGa 1-xN layer is, the higher the critical electric field becomes. Although the reverse leakage current of AlxGa1-xN-based diodes increases with increasing temperature, the breakdown voltage at elevated temperatures is similar to that at room temperature. These features indicate the feasibility of AlxGa1-xN-based diodes for high-temperature operation.

本文言語English
ページ(範囲)2838-2840
ページ数3
ジャーナルJapanese journal of applied physics
47
4 PART 2
DOI
出版ステータスPublished - 2008 4 25
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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