High-temperature dielectric responses in all-nanosheet capacitors

Muhammad Shuaib Khan, Minoru Osada, Hyung Jun Kim, Yasuo Ebina, Wataru Sugimoto, Takayoshi Sasaki

    研究成果: Article査読

    8 被引用数 (Scopus)

    抄録

    We have investigated high-temperature dielectric responses of layer-by-layer assembled nanosheet capacitors. All-nanosheet capacitors are fabricated by stacking metallic Ru0.95O2 as electrodes and dielectric Ca2Nb3O10 nanosheets as insulators. Through in situ characterizations, we find that all-nanosheet capacitors exhibit a size-free high-k dielectric response (>155) and a moderate insulation resistance (>1 ' 10%5A/cm2) at high temperatures up to 200 °C. The concomitant presence of high ϵr, low leakage profile, and thermal stability in high-k nanocapacitors is critically important for application in high-temperature electronics.

    本文言語English
    論文番号06GH09
    ジャーナルJapanese Journal of Applied Physics
    56
    6
    DOI
    出版ステータスPublished - 2017 6月 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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