TY - GEN
T1 - High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging
AU - Iizuka, Tomonori
AU - Tanaka, Yasunori
AU - Kamei, Kazuhito
AU - Inagaki, Masakazu
AU - Murakawa, Norihiro
AU - Tatsumi, Kohei
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/5/26
Y1 - 2017/5/26
N2 - The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.
AB - The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.
UR - http://www.scopus.com/inward/record.url?scp=85021090589&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021090589&partnerID=8YFLogxK
U2 - 10.1109/ISSM.2016.7934521
DO - 10.1109/ISSM.2016.7934521
M3 - Conference contribution
AN - SCOPUS:85021090589
T3 - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
BT - International Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Symposium on Semiconductor Manufacturing, ISSM 2016
Y2 - 12 December 2016 through 13 December 2016
ER -