High-temperature-resistant interconnection by using Nickel Nano-particles for power devices packaging

Tomonori Iizuka, Yasunori Tanaka, Kazuhito Kamei, Masakazu Inagaki, Norihiro Murakawa, Kohei Tatsumi

研究成果: Conference contribution

抄録

The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC at higher temperatures. We proposed a interconnection method using Nickel Nano-particles direct bonding to form bonds between the chip electrodes and substrates. SiC devices assembled with the Ni bonding interconnection were confirmed to be operated successfully in a high temperature environment over 300 °C.

本文言語English
ホスト出版物のタイトルInternational Symposium on Semiconductor Manufacturing, ISSM 2016 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509045112
DOI
出版ステータスPublished - 2017 5月 26
イベント24th International Symposium on Semiconductor Manufacturing, ISSM 2016 - Tokyo, Japan
継続期間: 2016 12月 122016 12月 13

出版物シリーズ

名前IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN(印刷版)1523-553X

Other

Other24th International Symposium on Semiconductor Manufacturing, ISSM 2016
国/地域Japan
CityTokyo
Period16/12/1216/12/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 工学(全般)
  • 産業および生産工学
  • 電子工学および電気工学

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