High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles

Yasunori Tanaka, Keito Ota, Haruka Miyano, Yoshiaki Shigenaga, Tomonori Iizuka, Kohei Tatsumi

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

Ni Micro-Plating and Ni nano-particle bonding were applied for high temperature resistant chip interconnections of power device packaging. During the evaluation of the reliability of interconnections annealed at up to 300°C, we observed no significant changes in mechanical or electrical properties. Die attach connection was carried out by sintering Ni nano-particles at a low temperature below 300°C. It was also revealed in a bonding experiment using a SiC chip with a deposited Al layer that direct bonding to an Al electrode was possible by using Ni nano-particles. A stress-relaxation structure using a metal film was presented as a new structure for resolving the problem of deteriorating bonding reliability due to thermal stress arising from differences in the coefficient of thermal expansion (CTE) between the chip and the substrate. A SiC device was assembled using the new bonding methods and an operating test was performed to verify normal operation in a high-temperature environment of approximately 300°C and higher.

元の言語English
ホスト出版物のタイトルProceedings - Electronic Components and Technology Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ページ1371-1376
ページ数6
2015-July
ISBN(印刷物)9781479986095
DOI
出版物ステータスPublished - 2015 7 15
イベント2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
継続期間: 2015 5 262015 5 29

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
United States
San Diego
期間15/5/2615/5/29

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • これを引用

    Tanaka, Y., Ota, K., Miyano, H., Shigenaga, Y., Iizuka, T., & Tatsumi, K. (2015). High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electro-plating and Ni nano-particles. : Proceedings - Electronic Components and Technology Conference (巻 2015-July, pp. 1371-1376). [7159776] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2015.7159776