High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating

Noriyuki Kato, Akiyoshi Shigenaga, Kohei Tatsumi

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2013
編集者Hajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
出版社Trans Tech Publications Ltd
ページ1110-1113
ページ数4
ISBN(印刷版)9783038350101
DOI
出版ステータスPublished - 2014
イベント15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
継続期間: 2013 9 292013 10 4

出版物シリーズ

名前Materials Science Forum
778-780
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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