High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating

Noriyuki Kato, Akiyoshi Shigenaga, Kohei Tatsumi

研究成果: Conference contribution

3 引用 (Scopus)

抄録

High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.

元の言語English
ホスト出版物のタイトルMaterials Science Forum
出版者Trans Tech Publications Ltd
ページ1110-1113
ページ数4
778-780
ISBN(印刷物)9783038350101
DOI
出版物ステータスPublished - 2014
イベント15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki
継続期間: 2013 9 292013 10 4

出版物シリーズ

名前Materials Science Forum
778-780
ISSN(印刷物)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Miyazaki
期間13/9/2913/10/4

Fingerprint

electroplating
Electroplating
packaging
Packaging
Temperature
power loss
Hybrid vehicles
Silicon
solders
Nickel
plating
Plating
Power control
Soldering alloys
high voltages
vehicles
Electric properties
electrical properties
nickel
wire

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

これを引用

Kato, N., Shigenaga, A., & Tatsumi, K. (2014). High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. : Materials Science Forum (巻 778-780, pp. 1110-1113). (Materials Science Forum; 巻数 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110

High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. / Kato, Noriyuki; Shigenaga, Akiyoshi; Tatsumi, Kohei.

Materials Science Forum. 巻 778-780 Trans Tech Publications Ltd, 2014. p. 1110-1113 (Materials Science Forum; 巻 778-780).

研究成果: Conference contribution

Kato, N, Shigenaga, A & Tatsumi, K 2014, High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. : Materials Science Forum. 巻. 778-780, Materials Science Forum, 巻. 778-780, Trans Tech Publications Ltd, pp. 1110-1113, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, 13/9/29. https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110
Kato N, Shigenaga A, Tatsumi K. High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. : Materials Science Forum. 巻 778-780. Trans Tech Publications Ltd. 2014. p. 1110-1113. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.1110
Kato, Noriyuki ; Shigenaga, Akiyoshi ; Tatsumi, Kohei. / High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating. Materials Science Forum. 巻 778-780 Trans Tech Publications Ltd, 2014. pp. 1110-1113 (Materials Science Forum).
@inproceedings{63bbbcf638c54eb9a9904a5b29ad17e4,
title = "High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating",
abstract = "High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.",
keywords = "Bonding, High temperature, Interconnection, Ni micro-plating, Packaging",
author = "Noriyuki Kato and Akiyoshi Shigenaga and Kohei Tatsumi",
year = "2014",
doi = "10.4028/www.scientific.net/MSF.778-780.1110",
language = "English",
isbn = "9783038350101",
volume = "778-780",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1110--1113",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating

AU - Kato, Noriyuki

AU - Shigenaga, Akiyoshi

AU - Tatsumi, Kohei

PY - 2014

Y1 - 2014

N2 - High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.

AB - High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300°C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500°C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.

KW - Bonding

KW - High temperature

KW - Interconnection

KW - Ni micro-plating

KW - Packaging

UR - http://www.scopus.com/inward/record.url?scp=84896074051&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896074051&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.778-780.1110

DO - 10.4028/www.scientific.net/MSF.778-780.1110

M3 - Conference contribution

AN - SCOPUS:84896074051

SN - 9783038350101

VL - 778-780

T3 - Materials Science Forum

SP - 1110

EP - 1113

BT - Materials Science Forum

PB - Trans Tech Publications Ltd

ER -