TY - JOUR
T1 - High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces
AU - Mu, Fengwen
AU - Cheng, Zhe
AU - Shi, Jingjing
AU - Shin, Seongbin
AU - Xu, Bin
AU - Shiomi, Junichiro
AU - Graham, Samuel
AU - Suga, Tadatomo
PY - 2019/9/11
Y1 - 2019/9/11
N2 - High-power GaN-based electronics are limited by high channel temperatures induced by self-heating, which degrades device performance and reliability. Increasing the thermal boundary conductance (TBC) between GaN and SiC will aid in the heat dissipation of GaN-on-SiC devices by taking advantage of the high thermal conductivity of SiC substrates. For the typical growth method, there are issues concerning the transition layer at the interface and low-quality GaN adjacent to the interface, which impedes heat flow. In this work, a room-temperature bonding method is used to bond high-quality GaN to SiC directly, which allows for the direct integration of high-quality GaN with SiC to create a high TBC interface. Time-domain thermoreflectance is used to measure the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of grown GaN-on-SiC by molecular beam epitaxy. High TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface (∼230 MW m-2 K-1, close to the highest value ever reported). Thus, this work provides the benefit of both a high TBC and higher GaN thermal conductivity, which will impact the GaN-device integration with substrates in which thermal dissipation always plays an important role. Additionally, simultaneous thermal and structural characterizations of heterogeneous bonded interfaces are performed to understand the structure-thermal property relation across this new type of interface.
AB - High-power GaN-based electronics are limited by high channel temperatures induced by self-heating, which degrades device performance and reliability. Increasing the thermal boundary conductance (TBC) between GaN and SiC will aid in the heat dissipation of GaN-on-SiC devices by taking advantage of the high thermal conductivity of SiC substrates. For the typical growth method, there are issues concerning the transition layer at the interface and low-quality GaN adjacent to the interface, which impedes heat flow. In this work, a room-temperature bonding method is used to bond high-quality GaN to SiC directly, which allows for the direct integration of high-quality GaN with SiC to create a high TBC interface. Time-domain thermoreflectance is used to measure the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of grown GaN-on-SiC by molecular beam epitaxy. High TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface (∼230 MW m-2 K-1, close to the highest value ever reported). Thus, this work provides the benefit of both a high TBC and higher GaN thermal conductivity, which will impact the GaN-device integration with substrates in which thermal dissipation always plays an important role. Additionally, simultaneous thermal and structural characterizations of heterogeneous bonded interfaces are performed to understand the structure-thermal property relation across this new type of interface.
KW - GaN-on-SiC
KW - interface
KW - room-temperature bonding
KW - thermal boundary conductance
KW - time-domain thermoreflectance
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U2 - 10.1021/acsami.9b10106
DO - 10.1021/acsami.9b10106
M3 - Article
C2 - 31408316
AN - SCOPUS:85072057114
VL - 11
SP - 33428
EP - 33434
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 36
ER -