High two-dimensional electron mobility in si atomic-layer doped n-algaas/gaas grown by metalorganic chemical vapor deposition

Toshiki Makimoto, Naoki Kobayashi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Si atomic-layer doped n-AlGaAs/GaAs structures have been grown by metalorganic chemical vapor deposition using triethyl sources, arsine and silane. Two dimensional electron mobility of 1.3 x106 cm2/Vs is obtained at 4.2 K for a sheet electron concentration of 4.8 x 1011 cm-2. Because of the high quality of the two-dimensional electron gas, acoustic phonon scattering can be seen in the temperature dependence.

本文言語English
ページ(範囲)L648-L649
ジャーナルJapanese journal of applied physics
32
5 A
DOI
出版ステータスPublished - 1993 5
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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