High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

M. Syamsul, Y. Kitabayashi, D. Matsumura, T. Saito, Y. Shintani, H. Kawarada

研究成果: Article査読

23 被引用数 (Scopus)

抄録

We fabricated and characterized black polycrystalline diamond field effect transistors. By implementing a C-H bonded channel with a wide gate-drain length up to 20 μm, a breakdown voltage of 1.8 kV was achieved, which is the highest value reported for a diamond field effect transistor (FET) to date. Several of our devices achieved a breakdown voltage/wide gate-drain length ratio > 100 V/μm. This is comparable to the performance of lateral SiC and GaN FETs. We investigated the effects of voltage stress up to 2.0 kV, and showed that the maximum current density fell to 26% of its initial value of 2.42 mA/mm before the device eventually broke down at 1.1 kV.

本文言語English
論文番号203504
ジャーナルApplied Physics Letters
109
20
DOI
出版ステータスPublished - 2016 11 14

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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