High-voltage operation with high current gain of pnp AlGaNGaN heterojunction bipolar transistors with thin n -type GaN base

Kazuhide Kumakura*, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

A pnp AlGaNGaN heterojunction bipolar transistor (HBT) with a thin n-GaN base shows high-voltage operation with high current gain in the common-emitter configuration at room temperature. The device structure was grown by metalorganic vapor phase epitaxy on a sapphire substrate. The emitter area is 30 μm×50 μm. The HBT can operate at high voltage of 70 V with the maximum current gain of 40 at the collector current of 10 mA. The maximum output power density is 172 kW cm2. Transport characteristics in the HBT were also investigated. At small collector current, the current gain is dominated by the recombination current at the emitter-base heterojunction. At moderate collector current, the calculated minority hole diffusion length well agreed with that determined from electron beam induced current measurements, indicating the current gain is dominated by the minority carrier diffusion. At large collector current, a high injection effect was observed in the current gain characteristics.

本文言語English
論文番号023506
ページ(範囲)023506-1-023506-3
ジャーナルApplied Physics Letters
86
2
DOI
出版ステータスPublished - 2005 1月 10
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「High-voltage operation with high current gain of pnp AlGaNGaN heterojunction bipolar transistors with thin n -type GaN base」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル