High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al2O3 Passivation Layer

Mohd Syamsul, Yuya Kitabayashi, Takuya Kudo, Daisuke Matsumura, Hiroshi Kawarada

    研究成果: Article

    9 引用 (Scopus)

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    A transparent polycrystalline diamond field-effect transistor (FET) was fabricated and measured in room temperature measurements, which reveals comparatively high maximum current density and high breakdown voltage of more than 1000 V. A harsh stress environment is proposed for simple and time-effective reliability stress measurement of the FET using a method of 50 continuous cycles of 500-V voltage stress. A 400-nm-thick Al2O3 counter-destructive passivation layer was implemented on the FET for the stress measurements. Devices with wide gate-drain length (LGD) retain their FET characteristics after the harsh stress measurements by only 50% reductions maximum current density.

    元の言語English
    記事番号7882717
    ページ(範囲)607-610
    ページ数4
    ジャーナルIEEE Electron Device Letters
    38
    発行部数5
    DOI
    出版物ステータスPublished - 2017 5 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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