High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al2O3 Passivation Layer

Mohd Syamsul*, Yuya Kitabayashi, Takuya Kudo, Daisuke Matsumura, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

18 被引用数 (Scopus)

抄録

A transparent polycrystalline diamond field-effect transistor (FET) was fabricated and measured in room temperature measurements, which reveals comparatively high maximum current density and high breakdown voltage of more than 1000 V. A harsh stress environment is proposed for simple and time-effective reliability stress measurement of the FET using a method of 50 continuous cycles of 500-V voltage stress. A 400-nm-thick Al2O3 counter-destructive passivation layer was implemented on the FET for the stress measurements. Devices with wide gate-drain length (LGD) retain their FET characteristics after the harsh stress measurements by only 50% reductions maximum current density.

本文言語English
論文番号7882717
ページ(範囲)607-610
ページ数4
ジャーナルIEEE Electron Device Letters
38
5
DOI
出版ステータスPublished - 2017 5月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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