High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

N. Presser*, G. Kudlek, J. Gutowski, S. M. Durbin, D. R. Menke, Masakazu Kobayashi, R. L. Gunshor

*この研究の対応する著者

研究成果: Article査読

15 被引用数 (Scopus)

抄録

ZnSe epilayers grown by MBE on (100) GaAs substrates are optically investigated in comparison with bulk ZnSe crystals using photoluminescence and excitation spectroscopy under high excitation densities. High‐density luminescence bands appear in both materials for relatively low excitation densities (about 30 kW/cm2), but their energetic positions do not correspond. The intensity‐dependent shape, and the behaviour of the dominant band in bulk ZnSe in excitation spectroscopy are similar to that of the M band in other II VI semiconductors. The main bands growing up in the ZnSe/GaAs films are much more corresponding to typical P‐band emission of exciton‐exciton collision. Further, the transmission of ZnSe epilayers released from the GaAs substrate is studied in dependence on the laser intensity.

本文言語English
ページ(範囲)443-448
ページ数6
ジャーナルPhysica Status Solidi (B): Basic Research
159
1
DOI
出版ステータスPublished - 1990
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル