Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of SiO2 thin film on Si

Kunihiko Koike, Shingo Ichimura, Akira Kurokawa, Ken Nakamura

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We have investigated the characteristics of silicon oxidation by concentrated ozone gas through the comparison of the oxidation by oxygen molecules. A sophisticated high-concentration ozone generator, which exploits the ozone/oxygen gas separation technique with silica gel, has been developed for the study. The generator can continuously supply ozone-oxygen mixtures with ozone concentrations up to 30 at.% at one atmospheric pressure. Ozone gas with a concentration of 25 at.% from the generator formed SiO2 films as thick as 2 nm and 6 nm on Si for a 30 min. exposure at 200°C and 600°C, respectively. On the other hand, oxygen gas by itself could form SiO2 films with only 1 nm and 3 nm thickness, respectively, at the same conditions. Moreover, in the oxide film formation at 600°C, the oxide film growth by ozone was proceeded with an oxidation time in excess of 240 min., while it saturated within very short time in the oxidation by oxygen. These phenomena verify the strong oxidation power of ozone. In addition, we confirmed that the growth rate of the silicon oxide with ozone dramatically changed when the substrate temperature was over 500°C, and this suggested the change of oxidation mechanism at this point. However, such a characteristic was not found in oxidation with oxygen.

本文言語English
論文番号155
ページ(範囲)108-112
ページ数5
ジャーナルJournal of Electronic Materials
31
2
DOI
出版ステータスPublished - 2002 1月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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