Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation

T. Kuroi*, S. Shimizu, A. Furukawa, S. Komori, Y. Kawasaki, S. Kusunoki, Y. Okumura, M. Inuishi, N. Tsubouchi, K. Horie

*この研究の対応する著者

研究成果: Conference article査読

13 被引用数 (Scopus)

抄録

An advanced nitrogen implantation technique is proposed. New technique can remarkably suppress the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO2 spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.

本文言語English
ページ(範囲)19-20
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1995 12月 1
外部発表はい
イベントProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
継続期間: 1995 6月 61995 6月 8

ASJC Scopus subject areas

  • 電子工学および電気工学

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