Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation

T. Kuroi, S. Shimizu, A. Furukawa, S. Komori, Y. Kawasaki, S. Kusunoki, Y. Okumura, M. Inuishi, N. Tsubouchi, K. Horie

研究成果: Conference article

13 引用 (Scopus)

抜粋

An advanced nitrogen implantation technique is proposed. New technique can remarkably suppress the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO2 spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.

元の言語English
ページ(範囲)19-20
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版物ステータスPublished - 1995 12 1
イベントProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
継続期間: 1995 6 61995 6 8

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Kuroi, T., Shimizu, S., Furukawa, A., Komori, S., Kawasaki, Y., Kusunoki, S., Okumura, Y., Inuishi, M., Tsubouchi, N., & Horie, K. (1995). Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation. Digest of Technical Papers - Symposium on VLSI Technology, 19-20.