Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation

T. Kuroi^*, S. Shimizu, A. Furukawa, S. Komori, Y. Kawasaki, S. Kusunoki, Y. Okumura, M. Inuishi, N. Tsubouchi, K. Horie

^*この研究の対応する著者

研究成果: Conference article › 査読