Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A. Tajiri*, K. Minakuchi, K. Komeda, Y. Bessho, Y. Inoue, K. Yodoshi, T. Yamaguchi

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimizing its structure with a 0·8 μm thick p-cladding layer, a 1200 μm long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 °C was confirmed for more than 1200 h. Optical feedback noise was below 3×10-14 Hz-1.

本文言語English
ページ(範囲)369-370
ページ数2
ジャーナルElectronics Letters
29
4
出版ステータスPublished - 1993 1 1
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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