High‐Rate Thermal Plasma CVD of SiC

Hideyuki Murakami, TOYONOBU YOSHIDA, KAZUO AKASHI

研究成果: Article査読

29 被引用数 (Scopus)

抄録

Using a hybrid thermal plasma reactor for a new CVD process, thick SiC layers were successfully deposited at a rate of ≅500 μm/h on a graphite substrate from SiCl4 and CH4 under soft vacuum (≅2.7times104 Pa). The process is performed typically under flow rates of SiCl4=1.5 g/min and CH4=300 cm3/min and deposition temperatures of 1000° to 1100°C. The effects of deposition conditions on certain characteristics of the deposited layers were investigated. SEM revealed that the appearance of the deposited layers strongly depended on the substrate position. The prepared layers were dense and nearly stoichiometric β‐SiC with (100) preferred orientation. A new method for measuring substrate temperature is also reported, and growth characteristics are discussed. 1988 The American Ceramic Society

本文言語English
ページ(範囲)423-426
ページ数4
ジャーナルAdvanced Ceramic Materials
3
4
DOI
出版ステータスPublished - 1988 1 1
外部発表はい

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 地質学
  • 地球化学および岩石学
  • 材料化学

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