HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface

Kazuyuki Hirama, Kyosuke Tsuge, Syunsuke Sato, Tetsuya Tsuno, Yoshikatsu Jingu, Shintaro Yamauchi, Hiroshi Kawarada

研究成果: Article査読

47 被引用数 (Scopus)

抄録

Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (̃5 kΩ/sq) has been obtained compared with widely used (001) diamond surfaces (̃10 kΩ/sq). Using the hole accumulation layer channel, a high drain current density of -850mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.

本文言語English
論文番号044001
ジャーナルApplied Physics Express
3
4
DOI
出版ステータスPublished - 2010 4 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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