Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (̃5 kΩ/sq) has been obtained compared with widely used (001) diamond surfaces (̃10 kΩ/sq). Using the hole accumulation layer channel, a high drain current density of -850mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.
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