Hole conduction characteristics of cubic Ti1−xAlxN

Masahiro Yoshikawa, Daiki Toyama, Toshiaki Fujita, Noriaki Nagatomo, Toshiki Makimoto*

*この研究の対応する著者

研究成果: Article査読

抄録

Cubic Ti1−xAlxN (x = 0.5, 0.6) films were deposited using RF (radio frequency) magnetron sputtering and cathodic arc ion plating methods on a thermally oxidized Si substrate to evaluate the temperature dependence of their electrical characteristics by Hall measurements from 10 K to 295 K. The temperature dependence of the hole concentration and the electrical conductivity above about 200 K shows that cubic TiAlN in this study had semiconductor characteristics, indicating that the hole conduction in the valence band is dominant in a high temperature range above about 200 K. In contrast, the variable range hopping conduction is dominant in a low temperature range below about 100 K. In addition, the hole mobility of Ti0.4Al0.6N deposited by RF sputtering increased with increasing temperature above 220 K, even though the phonon scattering increases. This result shows that a disordered grain boundary between polycrystalline TiAlN acts as a barrier layer for the hole conduction.

本文言語English
ページ(範囲)711-714
ページ数4
ジャーナルThin Solid Films
660
DOI
出版ステータスPublished - 2018 8 30

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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