Hole mobility enhancement and p-doping in monolayer WSe<inf>2</inf> by gold decoration

Chang Hsiao Chen, Chun Lan Wu, Jiang Pu, Ming Hui Chiu, Pushpendra Kumar, Taishi Takenobu, Lain Jong Li

    研究成果: Article

    92 被引用数 (Scopus)

    抄録

    Tungsten diselenide (WSe<inf>2</inf>) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe<inf>2</inf> monolayer, where a more p-typed WSe<inf>2</inf> field effect transistor is realized by electron transfer from the WSe<inf>2</inf> to the gold (Au) decorated on the WSe<inf>2</inf> surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe<inf>2</inf> monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ∼100 (cm<sup>2</sup>/Vs) and the near ideal subthreshold swing of ∼60mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe<inf>2</inf> also serves as a protection layer to prevent a reaction between the WSe<inf>2</inf> and the environment, making the doping stable and promising for future scalable fabrication.

    本文言語English
    論文番号034001
    ジャーナル2D Materials
    1
    3
    DOI
    出版ステータスPublished - 2014 12 1

    ASJC Scopus subject areas

    • Mechanics of Materials
    • Mechanical Engineering
    • Materials Science(all)
    • Chemistry(all)
    • Condensed Matter Physics

    フィンガープリント 「Hole mobility enhancement and p-doping in monolayer WSe<inf>2</inf> by gold decoration」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル