TY - JOUR
T1 - Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors
AU - Takeda, Kyozaburo
AU - Matsumoto, Nobuo
AU - Taguchi, Akihito
AU - Taki, Hiroyuki
AU - Ohta, Eiji
AU - Sakata, Makoto
N1 - Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1985
Y1 - 1985
N2 - With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.
AB - With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.
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U2 - 10.1103/PhysRevB.32.1101
DO - 10.1103/PhysRevB.32.1101
M3 - Article
AN - SCOPUS:0642341214
VL - 32
SP - 1101
EP - 1111
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 2
ER -