抄録
With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.
本文言語 | English |
---|---|
ページ(範囲) | 1101-1111 |
ページ数 | 11 |
ジャーナル | Physical Review B |
巻 | 32 |
号 | 2 |
DOI | |
出版ステータス | Published - 1985 1 1 |
外部発表 | はい |
ASJC Scopus subject areas
- Condensed Matter Physics