Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

Kyozaburo Takeda*, Nobuo Matsumoto, Akihito Taguchi, Hiroyuki Taki, Eiji Ohta, Makoto Sakata

*この研究の対応する著者

研究成果: Article査読

19 被引用数 (Scopus)

抄録

With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.

本文言語English
ページ(範囲)1101-1111
ページ数11
ジャーナルPhysical Review B
32
2
DOI
出版ステータスPublished - 1985
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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