Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface

M. Kobayashi, K. Wakao, S. Nakamura, A. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.

本文言語English
ページ(範囲)474-476
ページ数3
ジャーナルJournal of Crystal Growth
201
DOI
出版ステータスPublished - 1999 5
外部発表はい
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 1998 8 311998 9 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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