Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

S. Kusunoki, Masahide Inuishi, T. Yamaguchi, K. Tsukamoto, Y. Akasaka

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO film as a gate insulator. Hot-carrier resistance against drain avalanche hot carrier injection is improved without degrading the resistance against channel-hot-electron injection or the mobility. Moreover, the authors have studied the nature of the RNO films in contrast to oxide films from the viewpoint of hot-carrier resistance.

本文言語English
ホスト出版物のタイトルInternational Electron Devices Meeting 1991, IEDM 1991
出版社Institute of Electrical and Electronics Engineers Inc.
ページ649-652
ページ数4
1991-January
ISBN(電子版)0780302435
DOI
出版ステータスPublished - 1991
外部発表はい
イベントInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
継続期間: 1991 12 81991 12 11

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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