Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

S. Kusunoki, Masahide Inuishi, T. Yamaguchi, K. Tsukamoto, Y. Akasaka

研究成果: Conference contribution

2 被引用数 (Scopus)

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Engineering & Materials Science

Physics & Astronomy

Chemical Compounds