Hot-implantation of phosphorus ions into 4H-SiC

Seiji Imai, Setsuko Kobayashi, Takashi Shinohe, Kenji Fukuda, Yasunori Tanaka, Junji Senzaki, Hisao Tanoue, Naoto Kobayashi, Hideyo Okushi

研究成果: Chapter

15 引用 (Scopus)

抜粋

Ion implantation of phosphorus (P) into 4H-SiC at room temperature and 500 °C was investigated. The P profiles simulated with a TRIM (transport of ions in matter) program showed good agreement with experimental results. The sheet resistance (R s) of implanted layers at both temperatures decreased with increases in the annealing temperature between 1200 °C and 1600 °C. Also, in the case of the implanted layer at 500 °C, a low sheet resistance of 71 Ω/□ was obtained by annealing at 1600 °C. Hot-implantation was found to greatly improve the carrier concentration obtained by Hall-effect measurements. In the case of annealing at 1700 °C, the R s of implanted layers at both temperatures increased sharply. From AFM analysis, it is thought that the increase in R s is due to the sublimation or evaporation of SiC from the surface of the implanted layer.

元の言語English
ホスト出版物のタイトルMaterials Science Forum
出版者Trans Tech Publ Ltd
338
出版物ステータスPublished - 2000
外部発表Yes
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 1999 10 101999 10 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
Research Triangle Park, NC, USA
期間99/10/1099/10/15

ASJC Scopus subject areas

  • Materials Science(all)

フィンガープリント Hot-implantation of phosphorus ions into 4H-SiC' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N., & Okushi, H. (2000). Hot-implantation of phosphorus ions into 4H-SiC. : Materials Science Forum (巻 338). Trans Tech Publ Ltd.