How are spin gap and pairing correlations of doped Mott insulators controlled by the geometry of the lattice structure?

Masatoshi Imada, Masanori Kohno, Hirokazu Tsunetsugu

研究成果: Conference article査読

抄録

Proposals to enhance the spin excitation gap and the pairing correlations in doped Mott insulators are reviewed. Design and tuning of flat dispersions near the Fermi level extend the critical region of the metal-to-Mott insulator transition thereby inducing stronger pairing instabilities. Several one- and two-dimensional decorated lattices are studied. We also discuss the tuning for stronger d-wave pairing instabilities in a microscopic model of high-Tc cuprates.

本文言語English
ページ(範囲)303-307
ページ数5
ジャーナルPhysica B: Condensed Matter
280
1-4
DOI
出版ステータスPublished - 2000 5月 11
外部発表はい
イベント22nd International Conference on Low Temperature Physics (LT-22) - Helsinki, Finl
継続期間: 1999 8月 41999 8月 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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