HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.

Y. Kushiro*, Y. Noda, Yuichi Matsushima, S. Akiba

*この研究の対応する著者

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.

本文言語English
ホスト出版物のタイトルInstitute of Physics Conference Series
編集者B. de Cremoux
ページ157-162
ページ数6
74
出版ステータスPublished - 1985
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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