抄録
Solid phase epitaxy (SPE) of amorphous Si layers of several tens of monolayers on hydrogen-adsorbed Si (0 0 1) substrates was studied in situ by low-energy time-of-flight (TOF) Rutherford Backscattering (RBS)-channeling spectrometry using 25 keV hydrogen ions, and by reflection high energy electron diffraction (RHEED). The SPE has not occurred at all for heating to 600°C even in the case of less than 1 ML adsorption of hydrogen on the Si (0 0 1) surface. Although the SPE has occurred for heating to 700°C, polycrystalline, or {1 1 1} faceted surface were formed. We did not obtain pronounced differences between the effects of the hydrogen adsorption of more or of less than 1 ML on the SPE of Si on Si (0 0 1). In the case of high density hydrogen-containing amorphous Si on a Si (0 0 1) clean surface the SPE has occurred at 600°C, and a {1 1 1} faceted surface was observed. Hydrogen adsorption obstructs the SPE of Si on Si (0 0 1) even if the coverage is less than 1 ML. The rise of the SPE temperature of amorphous Si on a hydrogen-adsorbed Si (0 0 1) surface is attributed to the hydrogen adsorption on the surface.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 209-213 |
| ページ数 | 5 |
| ジャーナル | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| 巻 | 136-138 |
| 出版物ステータス | Published - 1998 3 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
これを引用
Hydrogen effect on solid phase epitaxy of Si on Si (0 0 1) surface. / Hasegawa, Masataka; Tanaka, Yasunori; Kobayashi, Naoto.
：: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 巻 136-138, 03.1998, p. 209-213.研究成果: Article
}
TY - JOUR
T1 - Hydrogen effect on solid phase epitaxy of Si on Si (0 0 1) surface
AU - Hasegawa, Masataka
AU - Tanaka, Yasunori
AU - Kobayashi, Naoto
PY - 1998/3
Y1 - 1998/3
N2 - Solid phase epitaxy (SPE) of amorphous Si layers of several tens of monolayers on hydrogen-adsorbed Si (0 0 1) substrates was studied in situ by low-energy time-of-flight (TOF) Rutherford Backscattering (RBS)-channeling spectrometry using 25 keV hydrogen ions, and by reflection high energy electron diffraction (RHEED). The SPE has not occurred at all for heating to 600°C even in the case of less than 1 ML adsorption of hydrogen on the Si (0 0 1) surface. Although the SPE has occurred for heating to 700°C, polycrystalline, or {1 1 1} faceted surface were formed. We did not obtain pronounced differences between the effects of the hydrogen adsorption of more or of less than 1 ML on the SPE of Si on Si (0 0 1). In the case of high density hydrogen-containing amorphous Si on a Si (0 0 1) clean surface the SPE has occurred at 600°C, and a {1 1 1} faceted surface was observed. Hydrogen adsorption obstructs the SPE of Si on Si (0 0 1) even if the coverage is less than 1 ML. The rise of the SPE temperature of amorphous Si on a hydrogen-adsorbed Si (0 0 1) surface is attributed to the hydrogen adsorption on the surface.
AB - Solid phase epitaxy (SPE) of amorphous Si layers of several tens of monolayers on hydrogen-adsorbed Si (0 0 1) substrates was studied in situ by low-energy time-of-flight (TOF) Rutherford Backscattering (RBS)-channeling spectrometry using 25 keV hydrogen ions, and by reflection high energy electron diffraction (RHEED). The SPE has not occurred at all for heating to 600°C even in the case of less than 1 ML adsorption of hydrogen on the Si (0 0 1) surface. Although the SPE has occurred for heating to 700°C, polycrystalline, or {1 1 1} faceted surface were formed. We did not obtain pronounced differences between the effects of the hydrogen adsorption of more or of less than 1 ML on the SPE of Si on Si (0 0 1). In the case of high density hydrogen-containing amorphous Si on a Si (0 0 1) clean surface the SPE has occurred at 600°C, and a {1 1 1} faceted surface was observed. Hydrogen adsorption obstructs the SPE of Si on Si (0 0 1) even if the coverage is less than 1 ML. The rise of the SPE temperature of amorphous Si on a hydrogen-adsorbed Si (0 0 1) surface is attributed to the hydrogen adsorption on the surface.
UR - http://www.scopus.com/inward/record.url?scp=0032021061&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032021061&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032021061
VL - 136-138
SP - 209
EP - 213
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -