The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy(XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for H/Si(111). The dissociation rate of ozone molecule on H/Si was estimated to be ≈0.2 with a directional mass analyzer.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1998 1月 1|
|イベント||Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA|
継続期間: 1998 4月 13 → 1998 4月 17
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