抄録
The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy(XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for H/Si(111). The dissociation rate of ozone molecule on H/Si was estimated to be ≈0.2 with a directional mass analyzer.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 37-42 |
| ページ数 | 6 |
| ジャーナル | Materials Research Society Symposium - Proceedings |
| 巻 | 513 |
| 出版ステータス | Published - 1998 1月 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA 継続期間: 1998 4月 13 → 1998 4月 17 |
ASJC Scopus subject areas
- 材料科学（全般）
- 凝縮系物理学
- 材料力学
- 機械工学