Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Masafumi Inaba, Tsubasa Muta, Mikinori Kobayashi, Toshiki Saito, Masanobu Shibata, Daisuke Matsumura, Takuya Kudo, Atsushi Hiraiwa, Hiroshi Kawarada

研究成果: Article査読

31 被引用数 (Scopus)

抄録

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

本文言語English
論文番号033503
ジャーナルApplied Physics Letters
109
3
DOI
出版ステータスPublished - 2016 7月 18

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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