@article{bab35ac89ee34e1fb5449c0fc72e9dc9,
title = "Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate",
abstract = "The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.",
author = "Masafumi Inaba and Tsubasa Muta and Mikinori Kobayashi and Toshiki Saito and Masanobu Shibata and Daisuke Matsumura and Takuya Kudo and Atsushi Hiraiwa and Hiroshi Kawarada",
note = "Funding Information: This study was supported by a Grant-in-Aid for Fundamental Research S (26220903, JSPS) and a grant from Mitsubishi Materials Corporation in Japan. We thank The Institute for Nanoscience and Nanotechnology at Waseda University for the use of equipment. Publisher Copyright: {\textcopyright} 2016 Author(s). Copyright: Copyright 2016 Elsevier B.V., All rights reserved.",
year = "2016",
month = jul,
day = "18",
doi = "10.1063/1.4958889",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",
}