I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions

R. Negishi*, T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, T. Ogawa, H. Ozawa

*この研究の対応する著者

研究成果: Article査読

31 被引用数 (Scopus)

抄録

I-V characteristics of single electron tunneling from a symmetric and an asymmetric double-barrier tunneling junction (DBTJ) were examined. A single Au nanoparticle was trapped in nanogap whose size was precisely controlled using a combination of electron beam lithography and molecular ruler technique. Though the symmetric junction showed a monotonic rise with a bias beyond the Coulomb gap voltage, the asymmetric junction showed Coulomb staircases. The capacitance of the junction estimated from the fitting curves using the Coulomb conventional theory was consistent with the capacitance calculated from the observed structure. The authors quantitatively found the correlation between the electrical and structural properties of DBTJ.

本文言語English
論文番号223112
ジャーナルApplied Physics Letters
90
22
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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