Identification of ultradilute dopants in ceramics

Isao Tanaka*, Teruyasu Mizoguchi, Masafumi Matsui, Satoru Yoshioka, Hirohiko Adachi, Tomoyuki Yamamoto, Toshihiro Okajima, Masanori Umesaki, Wai Yim Ching, Yoshiyuki Inoue, Masataka Mizuno, Hideki Araki, Yasuharu Shirai

*この研究の対応する著者

研究成果: Article査読

81 被引用数 (Scopus)

抄録

The properties of ceramic materials are strongly influenced by the presence of ultradilute impurities (dopants). Near-edge X-ray absorption fine structure (NEXAFS) measurements using third-generation synchotron sources can be used to identify ultradilute dopants, provided that a good theoretical tool is available to interpret the spectra. Here, we use NEXAFS analysis and first-principles calculations to study the local environments of Ga dopants at levels of 10 p.p.m in otherwise high-purity MgO. This analysis suggests that the extra charge associated with substitutional Ga on a Mg site is compensated by the formation of a Mg vacancy. This defect model is then confirmed by positron lifetime measurements and planewave pseudopotential calculations. This powerful combination of techniques should provide a general method of identifying the defect states of ultradilute dopants in ceramics.

本文言語English
ページ(範囲)541-545
ページ数5
ジャーナルNature Materials
2
8
DOI
出版ステータスPublished - 2003 8月
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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