Image formation by continuous writing with multi-beam in X-ray nanolithography

E. Toyota, Masakazu Washio

    研究成果: Conference contribution

    抄録

    Summary form only given. Difficulties in X-ray lithography are now condensed into mask related matters. Since the exposure mode is basically 1:1, more strict accuracy is requested for mask fabrication than for the final images. Mask fabrication technology has made remarkable progress, and image formation of 70 nm line width was reported recently (Miyatake et al, 2001). Meanwhile, pattern reduction necessitates narrowing gaps between mask and wafer, since the gaps decrease in proportion to the square of the line width. If we want to form 25-35 nm two-dimensional patterns in future, mask-wafer gaps of 2-4 μm are needed; it is impractical. Therefore, around 50-70 nm image forming has been considered as the limits of X-ray lithography. Recently, three types of X-ray mask were proposed which enable 25-35 nm image formation while keeping a practical proximity gap >8 μm. The first is enlarged pattern masks (EPMs), applying a line-narrowing effect by edge diffraction. The second is interference slit masks (ISMs), which form design images by interference effect from the slits of the mask. The third is focusing x-ray masks (FXMs), which form an array of concave lenses using the absorbing materials on the mask membrane. These masks, which reduce mask patterns partially (PRMs: partially reducing masks), relieve the limitation of the proximity gaps. In this article, we discuss the design of the masks, beamlines and procedures of writing for 25 nm image formations.

    本文言語English
    ホスト出版物のタイトル2001 International Microprocesses and Nanotechnology Conference, MNC 2001
    出版社Institute of Electrical and Electronics Engineers Inc.
    ページ140-141
    ページ数2
    ISBN(印刷版)4891140178, 9784891140175
    DOI
    出版ステータスPublished - 2001
    イベントInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
    継続期間: 2001 10 312001 11 2

    Other

    OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
    国/地域Japan
    CityShimane
    Period01/10/3101/11/2

    ASJC Scopus subject areas

    • バイオテクノロジー
    • 流体および伝熱
    • 電子工学および電気工学
    • 電子材料、光学材料、および磁性材料
    • 器械工学

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