Image formation by dynamic exposure with multispot beam in X-ray nanolithography

Eijiro Toyota*, Masakazu Washio

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 μm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.

本文言語English
ページ(範囲)4404-4409
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
6 B
DOI
出版ステータスPublished - 2002 6月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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