IMC growth of solid state reaction between Ni UBM and Sn-3Ag-0.5Cu and Sn-3.5Ag solder bump using ball place bumping method during aging

Shinji Ishikawa, Eiji Hashino, Taro Kono, Kohei Tatsumi

研究成果: Article

17 引用 (Scopus)

抜粋

The humps for flip chip interconnection are becoming smaller and smaller. Since lead-free solders became popular, Ni-based under bump metallization (UBM) has attracted attention in recent years because of their slower reaction rate than traditional Cu-based UBM. However, there is little data concerning the solid state reaction between small lead-free solder bumps and Ni-based UBM. In this work, Sn-3Ag-0.5Cu and Sn-3.5Ag solder bumps were fabricated with 110-μm-diameter solder balls on electrolytic Ni, and the growth kinetics of intermetallic compound (IMC) layers and the morphology of bumps during long-term aging were investigated. The IMC layer exhibited parabolic growth, and the activation energy values for the Sn-3Ag-0.5Cu or Sn-3.5Ag solder/Ni UBM were obtained. The growth rate accelerated at 463 K or above. (Ni,Cu) 3Sn4 or Ni3Sn4 IMC was formed mainly at the solder/Ni interface after long-term aging. Large voids were formed at the solder/IMC interface at 463 K or above. The voids are the result of stress by volume expansion due to IMC growth. Coarse Ag3Sn grains were observed adjacent to the voids and contributed to void initiation.

元の言語English
ページ(範囲)2351-2358
ページ数8
ジャーナルMaterials Transactions
46
発行部数11
DOI
出版物ステータスPublished - 2005 11 1
外部発表Yes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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