Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

Masahiro Hori, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari, Takahiro Shinada

研究成果: Conference contribution

抜粋

With the gate length of MOSFETs approaching 10 nm, the channel region contains only one or a few dopant atoms. Thus, the number and position of dopant atoms become critical factors in determining device performance. In previous work, we have revealed that the control of not only the dopant atom number but also its position is essential by experimentally for the first time [1]. A several theoretical analyses of random dopant fluctuation (RDF) effects have been presented since 1990s [2,3,4]. However, the effect of individual dopant positions on device electrical properties is not well understood experimentally. Here, we report the fabrication of transistors whose channel dopants are implanted one by one using single-ion implantation (SII) method [5,6,7]. Electrical measurements reveal that controlling of discrete dopant position serves to highlight the improvements in device transconductance.

元の言語English
ホスト出版物のタイトルExtended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011
ページ75-76
ページ数2
DOI
出版物ステータスPublished - 2011 9 1
イベント11th International Workshop on Junction Technology, IWJT 2011 - Kyoto, Japan
継続期間: 2011 6 92011 6 10

出版物シリーズ

名前Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011

Conference

Conference11th International Workshop on Junction Technology, IWJT 2011
Japan
Kyoto
期間11/6/911/6/10

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture

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  • これを引用

    Hori, M., Ono, Y., Komatsubara, A., Kumagai, K., Tanii, T., Endoh, T., Ohdomari, I., & Shinada, T. (2011). Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs. : Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011 (pp. 75-76). [5970003] (Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011). https://doi.org/10.1109/IWJT.2011.5970003