Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

Masahiro Hori*, Yukinori Ono, Akira Komatsubara, Kuninori Kumagai, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari, Takahiro Shinada

*この研究の対応する著者

研究成果: Conference contribution

抄録

With the gate length of MOSFETs approaching 10 nm, the channel region contains only one or a few dopant atoms. Thus, the number and position of dopant atoms become critical factors in determining device performance. In previous work, we have revealed that the control of not only the dopant atom number but also its position is essential by experimentally for the first time [1]. A several theoretical analyses of random dopant fluctuation (RDF) effects have been presented since 1990s [2,3,4]. However, the effect of individual dopant positions on device electrical properties is not well understood experimentally. Here, we report the fabrication of transistors whose channel dopants are implanted one by one using single-ion implantation (SII) method [5,6,7]. Electrical measurements reveal that controlling of discrete dopant position serves to highlight the improvements in device transconductance.

本文言語English
ホスト出版物のタイトルExtended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011
ページ75-76
ページ数2
DOI
出版ステータスPublished - 2011 9月 1
イベント11th International Workshop on Junction Technology, IWJT 2011 - Kyoto, Japan
継続期間: 2011 6月 92011 6月 10

出版物シリーズ

名前Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011

Conference

Conference11th International Workshop on Junction Technology, IWJT 2011
国/地域Japan
CityKyoto
Period11/6/911/6/10

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • ハードウェアとアーキテクチャ

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