Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application

Yuuichi Hirano, Takashi Ipposhi, Hai Dang, Takuji Matsumoto, Toshiaki Iwamatsu, Kouji Nii, Yasumasa Tsukamoto, Tomoaki Yoshizawa, Hisayuki Kato, Shigeto Maegawa, Kazutami Arimoto, Yasuo Inoue, Masahide Inuishi, Yuzuru Ohji

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure including connections of the access and the driver transistor's bodies to the word line is proposed to realize low-voltage operation. We developed the direct body contact technology to apply forward biases to the bodies without area penalties and increases of parasitic gate capacitances by using the hybrid trench isolation [1] for the first time. Moreover, the standby current does not change because the body bias is not applied when the word-line voltage is low level. It is successfully demonstrated that low-voltage and high-speed operation is achieved by using the ABC SOI SRAM.

本文言語English
ページ(範囲)35-38
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 2003 12 1
外部発表はい
イベントIEEE International Electron Devices Meeting - Washington, DC, United States
継続期間: 2003 12 82003 12 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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