Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure including connections of the access and the driver transistor's bodies to the word line is proposed to realize low-voltage operation. We developed the direct body contact technology to apply forward biases to the bodies without area penalties and increases of parasitic gate capacitances by using the hybrid trench isolation  for the first time. Moreover, the standby current does not change because the body bias is not applied when the word-line voltage is low level. It is successfully demonstrated that low-voltage and high-speed operation is achieved by using the ABC SOI SRAM.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 2003 12 1|
|イベント||IEEE International Electron Devices Meeting - Washington, DC, United States|
継続期間: 2003 12 8 → 2003 12 10
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