Impact of boron penetration from S/D-extension on gate leakage current and gate-oxide reliability for 65-nm node CMOS and beyond

T. Yamashita, K. Shiga, T. Hayashi, H. Umeda, H. Oda, T. Eimori, Masahide Inuishi, Y. Ohji, K. Eriguchi, K. Nakanishi, H. Nakaoka, T. Yamada, M. Nakamura, I. Miyanaga, A. Kajiya, M. Kubota, M. Ogura

研究成果: Conference contribution

抜粋

For scaled CMOSFETs, it becomes much more difficult to ensure sufficient reliability of gate-oxide film, since power supply voltage is not scaled proportionally with gate-oxide. As well as the increase of the electrical stress that put on the gate-oxide, miniaturization effect should be cared. This paper demonstrates the performance of 65-nm node CMOSFETs, focused on gate oxide reliability, which is found to become crucial issue for short-channel pMOSFETs. Boron penetration from S/D-extension is found to increase gate leakage current and degrade gate oxide integrity. Fabrication process that suppresses the boron penetration is discussed, and optimized transistor characteristics for low operational power (LOP) and low standby power (LSTP) devices are presented.

元の言語English
ホスト出版物のタイトルIMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
出版者Institute of Electrical and Electronics Engineers Inc.
ページ123-124
ページ数2
ISBN(電子版)0780384237, 9780780384231
DOI
出版物ステータスPublished - 2004
外部発表Yes
イベント2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004 - Kyoto, Japan
継続期間: 2004 7 262004 7 28

Other

Other2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004
Japan
Kyoto
期間04/7/2604/7/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Yamashita, T., Shiga, K., Hayashi, T., Umeda, H., Oda, H., Eimori, T., Inuishi, M., Ohji, Y., Eriguchi, K., Nakanishi, K., Nakaoka, H., Yamada, T., Nakamura, M., Miyanaga, I., Kajiya, A., Kubota, M., & Ogura, M. (2004). Impact of boron penetration from S/D-extension on gate leakage current and gate-oxide reliability for 65-nm node CMOS and beyond. : IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai (pp. 123-124). [1566439] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2004.1566439