Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation

T. Kamioka, H. Imai, Takanobu Watanabe, K. Ohmori, K. Shiraishi, Y. Kamakura

    研究成果: Conference contribution

    抄録

    Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.

    元の言語English
    ホスト出版物のタイトルInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    ページ83-86
    ページ数4
    DOI
    出版物ステータスPublished - 2011
    イベント2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka
    継続期間: 2011 9 82011 9 10

    Other

    Other2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
    Osaka
    期間11/9/811/9/10

    Fingerprint

    Carrier transport
    Asymmetric Channel
    Molecular Dynamics Simulation
    Molecular dynamics
    Ensemble
    Straight
    Computer simulation
    Carrier mobility
    Ballistics
    Conductance
    Molecular Dynamics
    Enhancement
    Interaction

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

    これを引用

    Kamioka, T., Imai, H., Watanabe, T., Ohmori, K., Shiraishi, K., & Kamakura, Y. (2011). Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation. : International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 83-86). [6035055] https://doi.org/10.1109/SISPAD.2011.6035055

    Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation. / Kamioka, T.; Imai, H.; Watanabe, Takanobu; Ohmori, K.; Shiraishi, K.; Kamakura, Y.

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. p. 83-86 6035055.

    研究成果: Conference contribution

    Kamioka, T, Imai, H, Watanabe, T, Ohmori, K, Shiraishi, K & Kamakura, Y 2011, Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation. : International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 6035055, pp. 83-86, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, 11/9/8. https://doi.org/10.1109/SISPAD.2011.6035055
    Kamioka T, Imai H, Watanabe T, Ohmori K, Shiraishi K, Kamakura Y. Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation. : International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. p. 83-86. 6035055 https://doi.org/10.1109/SISPAD.2011.6035055
    Kamioka, T. ; Imai, H. ; Watanabe, Takanobu ; Ohmori, K. ; Shiraishi, K. ; Kamakura, Y. / Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2011. pp. 83-86
    @inproceedings{f91f8dde51954593b308527ceb5c03d6,
    title = "Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation",
    abstract = "Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.",
    keywords = "assymetric channel, ballistic transport, collimation effect, EMC-MD method, MOSFET",
    author = "T. Kamioka and H. Imai and Takanobu Watanabe and K. Ohmori and K. Shiraishi and Y. Kamakura",
    year = "2011",
    doi = "10.1109/SISPAD.2011.6035055",
    language = "English",
    isbn = "9781612844169",
    pages = "83--86",
    booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

    }

    TY - GEN

    T1 - Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation

    AU - Kamioka, T.

    AU - Imai, H.

    AU - Watanabe, Takanobu

    AU - Ohmori, K.

    AU - Shiraishi, K.

    AU - Kamakura, Y.

    PY - 2011

    Y1 - 2011

    N2 - Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.

    AB - Effect of the channel shape on the nano-scale carrier transport is studied by using the ensemble Monte-Carlo - molecular dynamics method (EMC/MD). Carrier transport in hone-shaped asymmetric channels which widen from source to drain sides is simulated by comparing that in the conventional straight channels. The obtained conductance of the horn-shaped channels is larger than that of the straight channel, as a result of the enhancement of the carrier mobility in the hone-shaped channel. This can be attributed to two reasons: the collimation effect of the asymmetric channel peculiar in the quasi-ballistic carrier transport regime, and the suppression of carrier-carrier interaction due to widening of the channel.

    KW - assymetric channel

    KW - ballistic transport

    KW - collimation effect

    KW - EMC-MD method

    KW - MOSFET

    UR - http://www.scopus.com/inward/record.url?scp=80055003783&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=80055003783&partnerID=8YFLogxK

    U2 - 10.1109/SISPAD.2011.6035055

    DO - 10.1109/SISPAD.2011.6035055

    M3 - Conference contribution

    AN - SCOPUS:80055003783

    SN - 9781612844169

    SP - 83

    EP - 86

    BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

    ER -