Recessed LOCOS isolation using high pressure dry O2 oxidation has been studied. The effect of the high pressure dry O2 oxidation on the bird's beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond with maintaining the process simplicity.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 1996 12 1|
|イベント||Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
継続期間: 1996 12 8 → 1996 12 11
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