Impact of image force effect on gate-all-around Schottky barrier tunnel FET

Shuichiro Hashimoto, Hiroki Kosugiyama, Kohei Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, Kenji Ohmori, Takanobu Watanabe

    研究成果: Conference contribution

    抜粋

    We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.

    元の言語English
    ホスト出版物のタイトル2014 IEEE International Nanoelectronics Conference, INEC 2014
    出版者Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子版)9781479950379
    DOI
    出版物ステータスPublished - 2016 4 26
    イベントIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
    継続期間: 2014 7 282014 7 31

    Other

    OtherIEEE International Nanoelectronics Conference, INEC 2014
    Japan
    Sapporo
    期間14/7/2814/7/31

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • これを引用

    Hashimoto, S., Kosugiyama, H., Takei, K., Sun, J., Kawamura, Y., Shikahama, Y., Ohmori, K., & Watanabe, T. (2016). Impact of image force effect on gate-all-around Schottky barrier tunnel FET. : 2014 IEEE International Nanoelectronics Conference, INEC 2014 [7460424] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460424