We studied the effects of nitrogen implantation in the SiO2 sidewall spacer in detail in order to improve in the reliability of lightly doped drain (LDD) metal oxide field-effect transistors (MOSFETs), since the hot carrier degradation of LDD MOSFETs remains one of major issues even in the sub-quarter-micron region. It was found that nitrogen implantation in the SiO2 sidewall spacer can effectively suppress the hot carrier degradation of the LDD structure because the nitrogen atoms are segregated at the interface between the sidewall SiO2 and the Si substrate. This segregation can reduce the generation of interface states or electron traps in the sidewall spacer without causing gate depletion or an increase in gate resistance. Highly reliable sub-quarter-micron LDD N-MOSFETs can be realized using this nitrogen implantation technique.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|発行部数||2 SUPPL. B|
|出版物ステータス||Published - 1996 2 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)