Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance

Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Shigeyasu Uno, Nobuya Mori

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Theoretical investigations are presented for the effects of atomic disorder, which is always present in Si/SiO2 interface, on the device performance for the first time. We show that the drain current is significantly reduced by a factor of 2 due to random configuration of Si atoms near the Si/SiO2 interfaces in a nanowire with 2.7 nm width. NFET is more easily affected by the disorder because of localized states near the conduction-band bottom. Suppression of the atomic disorder is a key to obtain good performance of nanowire FETs.

本文言語English
ホスト出版物のタイトル2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
ページ122-123
ページ数2
出版ステータスPublished - 2011 9 16
イベント2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
継続期間: 2011 6 142011 6 16

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
ISSN(印刷版)0743-1562

Conference

Conference2011 Symposium on VLSI Technology, VLSIT 2011
CountryJapan
CityKyoto
Period11/6/1411/6/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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