Impact of single trapped charge in gate-all-around nanowire channels studied by ensemble monte Carlo/Molecular dynamics simulation

T. Kamioka, H. Imai, T. Watanabe*, K. Ohmori, K. Shiraishi, M. Niwa, K. Yamada, Y. Kamakura

*この研究の対応する著者

研究成果: Conference contribution

抄録

Impact of a single trapped charge in an oxide layer on the carrier transport is numerically investigated for gate-allaround nanowire (GAA NW) channels, using the ensemble Monte Carlo / molecular dynamics simulation. The relative amplitude of current reduction caused by a single trapped charge increases in smaller NWs. This is due to the closer mean distance of carriers and the trapped charge in a downsized device, resulting increased impact of Coulomb scattering from the trapped charge to carriers. Under the same trap density, however, the smaller NWs show a decreasing tendency of the relative amplitude of current reduction if the current per NW is the same. Even in the practical operation conditions in which the current density per unit width is kept constant for each channel diameter, the relative amplitude of current reduction does not depend on the NW diameter. This indicates that the impact of the trapped charge on the relative amplitude of current reduction is determined by the trap density.

本文言語English
ホスト出版物のタイトルInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ11-14
ページ数4
ISBN(電子版)9780615717562
出版ステータスPublished - 2012
イベント2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
継続期間: 2012 9月 52012 9月 7

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
国/地域United States
CityDenver
Period12/9/512/9/7

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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