Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs

S. Shimizu, T. Kuroi, Y. Kawasaki, S. Kusunoki, Y. Okumura, Masahide Inuishi, H. Miyoshi

研究成果: Article

12 引用 (Scopus)

抄録

We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.

元の言語English
ページ(範囲)859-862
ページ数4
ジャーナルUnknown Journal
出版物ステータスPublished - 1995
外部発表Yes

Fingerprint

Field effect transistors
spacers
proximity
implantation
CMOS
field effect transistors
Nitrogen
nitrogen
nitrogen atoms
Oxides
oxides
Atoms
arsenic
boron
leakage
Hot carriers
degradation
Interface states
impurities
Arsenic

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs. / Shimizu, S.; Kuroi, T.; Kawasaki, Y.; Kusunoki, S.; Okumura, Y.; Inuishi, Masahide; Miyoshi, H.

:: Unknown Journal, 1995, p. 859-862.

研究成果: Article

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AU - Shimizu, S.

AU - Kuroi, T.

AU - Kawasaki, Y.

AU - Kusunoki, S.

AU - Okumura, Y.

AU - Inuishi, Masahide

AU - Miyoshi, H.

PY - 1995

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AB - We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.

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