Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs

S. Shimizu*, T. Kuroi, Y. Kawasaki, S. Kusunoki, Y. Okumura, M. Inuishi, H. Miyoshi

*この研究の対応する著者

研究成果: Conference article査読

13 被引用数 (Scopus)

抄録

We propose an advanced sub-quarter micron CMOS process for ultra shallow junction and high reliability using new nitrogen implantation technique. Nitrogen atoms implanted into the source/drain for NMOSFETs and PMOSFETs can suppress impurity diffusion and leakage current, since not only nitrogen atoms can occupy the diffusion path of arsenic and boron atoms but also the secondary defects induced by nitrogen implantation can act as a surface proximity gettering site. Moreover, this technique can remarkably suppress the hot carrier degradation for CMOS LDD FETs, since the segregation of nitrogen at interface between the substrate and the side-wall SiO2 can reduce the interface state generation under the side-wall spacer.

本文言語English
ページ(範囲)859-862
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1995 12月 1
外部発表はい
イベントProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
継続期間: 1995 12月 101995 12月 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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