Impact of the two traps related leakage mechanism on the tail distribution of DRAM retention characteristics

Shuichi Ueno*, Yasuo Inoue, Masahide Inuishi

*この研究の対応する著者

研究成果: Conference article査読

19 被引用数 (Scopus)

抄録

Two traps related leakage mechanism is proposed to explain the tail distribution of the DRAM retention characteristics. The main mode is explained by the trap assisted tunneling with one trap. We propose that the tail mode is created when the two traps are close enough to cooperate for increasing the leakage current. We calculate both the main and the tail distributions with the Monte Carlo method by using one basic equation deduced from our model for the first time.

本文言語English
ページ(範囲)37-40
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1999 12月 1
外部発表はい
イベント1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
継続期間: 1999 12月 51999 12月 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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