Impacts of strained SiO 2 on TDDB lifetime projection

Yoshinao Harada, Koji Eriguchi, Masaaki Niwa, Takanobu Watanabe, Iwao Ohdomari

研究成果: Conference contribution

14 引用 (Scopus)

抜粋

We clarify the effects of the strained-SiO 2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO 2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO 2/Si system.

元の言語English
ホスト出版物のタイトルDigest of Technical Papers - Symposium on VLSI Technology
出版者IEEE
ページ216-217
ページ数2
出版物ステータスPublished - 2000
外部発表Yes
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6 132000 6 15

Other

Other2000 Symposium on VLSI Technology
Honolulu, HI, USA
期間00/6/1300/6/15

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Harada, Y., Eriguchi, K., Niwa, M., Watanabe, T., & Ohdomari, I. (2000). Impacts of strained SiO 2 on TDDB lifetime projection Digest of Technical Papers - Symposium on VLSI Technology (pp. 216-217). IEEE.