Impacts of strained SiO 2 on TDDB lifetime projection

Yoshinao Harada, Koji Eriguchi, Masaaki Niwa, Takanobu Watanabe, Iwao Ohdomari

研究成果: Conference contribution

14 引用 (Scopus)

抄録

We clarify the effects of the strained-SiO 2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO 2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO 2/Si system.

元の言語English
ホスト出版物のタイトルDigest of Technical Papers - Symposium on VLSI Technology
出版者IEEE
ページ216-217
ページ数2
出版物ステータスPublished - 2000
外部発表Yes
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6 132000 6 15

Other

Other2000 Symposium on VLSI Technology
Honolulu, HI, USA
期間00/6/1300/6/15

Fingerprint

Electric breakdown
Oxides
Activation energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Harada, Y., Eriguchi, K., Niwa, M., Watanabe, T., & Ohdomari, I. (2000). Impacts of strained SiO 2 on TDDB lifetime projection Digest of Technical Papers - Symposium on VLSI Technology (pp. 216-217). IEEE.

Impacts of strained SiO 2 on TDDB lifetime projection . / Harada, Yoshinao; Eriguchi, Koji; Niwa, Masaaki; Watanabe, Takanobu; Ohdomari, Iwao.

Digest of Technical Papers - Symposium on VLSI Technology. IEEE, 2000. p. 216-217.

研究成果: Conference contribution

Harada, Y, Eriguchi, K, Niwa, M, Watanabe, T & Ohdomari, I 2000, Impacts of strained SiO 2 on TDDB lifetime projection Digest of Technical Papers - Symposium on VLSI Technology. IEEE, pp. 216-217, 2000 Symposium on VLSI Technology, Honolulu, HI, USA, 00/6/13.
Harada Y, Eriguchi K, Niwa M, Watanabe T, Ohdomari I. Impacts of strained SiO 2 on TDDB lifetime projection : Digest of Technical Papers - Symposium on VLSI Technology. IEEE. 2000. p. 216-217
Harada, Yoshinao ; Eriguchi, Koji ; Niwa, Masaaki ; Watanabe, Takanobu ; Ohdomari, Iwao. / Impacts of strained SiO 2 on TDDB lifetime projection Digest of Technical Papers - Symposium on VLSI Technology. IEEE, 2000. pp. 216-217
@inproceedings{a345910fad8a4aa0811d200a92a303ef,
title = "Impacts of strained SiO 2 on TDDB lifetime projection",
abstract = "We clarify the effects of the strained-SiO 2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO 2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO 2/Si system.",
author = "Yoshinao Harada and Koji Eriguchi and Masaaki Niwa and Takanobu Watanabe and Iwao Ohdomari",
year = "2000",
language = "English",
pages = "216--217",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "IEEE",

}

TY - GEN

T1 - Impacts of strained SiO 2 on TDDB lifetime projection

AU - Harada, Yoshinao

AU - Eriguchi, Koji

AU - Niwa, Masaaki

AU - Watanabe, Takanobu

AU - Ohdomari, Iwao

PY - 2000

Y1 - 2000

N2 - We clarify the effects of the strained-SiO 2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO 2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO 2/Si system.

AB - We clarify the effects of the strained-SiO 2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO 2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of T bd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO 2/Si system.

UR - http://www.scopus.com/inward/record.url?scp=0033725595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033725595&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033725595

SP - 216

EP - 217

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - IEEE

ER -