抜粋
We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 216-217 |
| ページ数 | 2 |
| ジャーナル | Digest of Technical Papers - Symposium on VLSI Technology |
| 出版物ステータス | Published - 2000 1 1 |
| 外部発表 | Yes |
| イベント | 2000 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 2000 6 13 → 2000 6 15 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
フィンガープリント Impacts of strained SiO<sub>2</sub> on TDDB lifetime projection' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Harada, Y., Eriguchi, K., Niwa, M., Watanabe, T., & Ohdomari, I. (2000). Impacts of strained SiO2 on TDDB lifetime projection. Digest of Technical Papers - Symposium on VLSI Technology, 216-217.