Impacts of strained SiO2 on TDDB lifetime projection

Yoshinao Harada, Koji Eriguchi, Masaaki Niwa, Takanobu Watanabe, Iwao Ohdomari

研究成果: Conference article

14 引用 (Scopus)

抜粋

We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.

元の言語English
ページ(範囲)216-217
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版物ステータスPublished - 2000 1 1
外部発表Yes
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6 132000 6 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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