TY - JOUR
T1 - Impacts of strained SiO2 on TDDB lifetime projection
AU - Harada, Yoshinao
AU - Eriguchi, Koji
AU - Niwa, Masaaki
AU - Watanabe, Takanobu
AU - Ohdomari, Iwao
PY - 2000/1/1
Y1 - 2000/1/1
N2 - We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.
AB - We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.
UR - http://www.scopus.com/inward/record.url?scp=0033725595&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033725595&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0033725595
SP - 216
EP - 217
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
T2 - 2000 Symposium on VLSI Technology
Y2 - 13 June 2000 through 15 June 2000
ER -