Impacts of strained SiO2 on TDDB lifetime projection

Yoshinao Harada*, Koji Eriguchi, Masaaki Niwa, Takanobu Watanabe, Iwao Ohdomari


研究成果: Conference article査読

14 被引用数 (Scopus)


We clarify the effects of the strained-SiO2 on the time dependent dielectric breakdown (TDDB) characteristics, the activation energy of the oxide breakdown and Weibull slope (β) for the ultra-thin gate oxide. Considerations based on the extended-Stillinger-Weber potential model show that the built-in compressive strain in SiO2 changes the statistical distribution of the Si-O-Si angle, leading to a decrease of Tbd and a spread of the distribution. The oxide breakdown tends to occur at the Si-O-Si network with a lower bond angle (approximately 115°) for the 2 nm-thick SiO2/Si system.

ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 2000 1月 1
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6月 132000 6月 15

ASJC Scopus subject areas

  • 電子工学および電気工学


「Impacts of strained SiO2 on TDDB lifetime projection」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。