Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch

Tohru Tsuruoka*, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

*この研究の対応する著者

研究成果: Conference contribution

抄録

The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.

本文言語English
ホスト出版物のタイトルMaterials and Physics of Emerging Nonvolatile Memories
ページ153-158
ページ数6
DOI
出版ステータスPublished - 2012
外部発表はい
イベント2012 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2012 4月 92012 4月 13

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1430
ISSN(印刷版)0272-9172

Other

Other2012 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period12/4/912/4/13

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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