Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

研究成果: Conference contribution

抜粋

The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.

元の言語English
ホスト出版物のタイトルMaterials and Physics of Emerging Nonvolatile Memories
ページ153-158
ページ数6
DOI
出版物ステータスPublished - 2012 12 1
外部発表Yes
イベント2012 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2012 4 92012 4 13

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1430
ISSN(印刷物)0272-9172

Other

Other2012 MRS Spring Meeting
United States
San Francisco, CA
期間12/4/912/4/13

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta<sub>2</sub>O<sub>5</sub>-based atomic switch' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Tsuruoka, T., Hasegawa, T., Terabe, K., & Aono, M. (2012). Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch. : Materials and Physics of Emerging Nonvolatile Memories (pp. 153-158). (Materials Research Society Symposium Proceedings; 巻数 1430). https://doi.org/10.1557/opl.2012.901