TY - GEN
T1 - Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch
AU - Tsuruoka, Tohru
AU - Hasegawa, Tsuyoshi
AU - Terabe, Kazuya
AU - Aono, Masakazu
N1 - Funding Information:
We would like to thank Prof. R. Waser and Dr. I. Valov at RTWH-Aachen University for fruitful discussions. This work was supported in part by the Strategic Japanese-German Cooperative Program, JST. T.T also acknowledges the financial support of the Iketani Science and Technology Foundation.
PY - 2012
Y1 - 2012
N2 - The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.
AB - The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.
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U2 - 10.1557/opl.2012.901
DO - 10.1557/opl.2012.901
M3 - Conference contribution
AN - SCOPUS:84875468001
SN - 9781605114071
T3 - Materials Research Society Symposium Proceedings
SP - 153
EP - 158
BT - Materials and Physics of Emerging Nonvolatile Memories
T2 - 2012 MRS Spring Meeting
Y2 - 9 April 2012 through 13 April 2012
ER -