Improved phosphosilicate glass passivation against Cu contamination using the rapid thermal annealing process

H. Miyazaki*, H. Kojima, A. Hiraiwa, Y. Homma, K. Murakami

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

passivation against Cu contamination is a key technology for realizing multilevel Cu interconnection for ultralarge scale integrated circuits (ULSI). Phosphosilicate glass (PSG) with rapid thermal annealing (RTA) is found to provide no less of a passivation effect than furnace-annealed (FA) PSG films, while significantly reducing the thermal budget of the PSG annealing from 900DGRC × 60 s (RTA). This suggests that the PSG-RTA process is applicable to 0.25 μm level metal oxide semiconductor (MOS) ULSIs, since both the amount of Cu diffusion and thermal budget are withing the limits of 0.25 μm MOS device technology.

本文言語English
ページ(範囲)734-736
ページ数3
ジャーナルJournal of the Electrochemical Society
141
3
出版ステータスPublished - 1994 3
外部発表はい

ASJC Scopus subject areas

  • 電気化学
  • 表面、皮膜および薄膜
  • 表面および界面

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